Sintesis dan Karakterisasi Semikonduktor TiO2 Doping Magnesium dengan Metode Hidrotermal:

Abstract

Semiconductors are materials that range between insulators and conductors in terms of conductivity value. Titanium Dioxide (TiO₂) is a semiconductor that is widely applied to various things. TiO₂ has the benefits, such as being environmentally stable and inexpensive. TiO₂ is photoactive in the range of ultraviolet radiation due to the band gap value of 3.2 eV. However, ultraviolet is only produced from 5% of sunlight. The research aimed to narrow the band gap energy so as to maximize light absorption. This is done by modification with the addition of Mg elements to TiO₂ materials at different mass variations of Mg (1%, 1.5%, 2%) to the mass of TiO₂ which is often referred to as doping. TiO₂ was doped by Mg using a hydrothermal method for 24 hours with a temperature of 180ᵒC, followed by 2 hours of calcination at 400ᵒC. Then, TiO₂ and Mg-doped TiO₂ particles were characterized by SEM-EDX, FTIR, and UV-Vis. Based on the results of TiO₂ and Mg-doped TiO₂ particle characterization using SEM, both particles are spherical in shape. The success of Mg doping was identified from the data of EDX characterization, which revealed that the mass % of the Mg component increased with the greater Mg doping concentration on TiO₂ particles. There was no structural change following Mg doping on TiO₂ particles, as evidenced by the same peak based on the results of FTIR characterization of TiO₂ and Mg-doped TiO₂ particles. Moreover, a 2% Mg mass doping on pure TiO₂ resulted in a decrease in band gap energy to 3.16 eV, in which the pure TiO₂ was 3.39 eV. The mass doping of Mg on TiO₂ required further optimization to obtain the maximum band gap energy reduction for photocatalytic applications.